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Physical Measurement Laboratory

Nanoscale Device Characterization Division

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Displaying 101 - 125 of 211

intel22nm transistor

Microscopy Technique Could Help Computer Industry Develop 3-D Components

June 25, 2013

A technique developed several years ago at the National Institute of Standards and Technology (NIST) for improving optical microscopes now has been applied to

Bryan Barnes and Rick Silver

New 3D Defect Detection Fills Important Industry Gap

May 13, 2013

As device manufacturing technologies sizes shrink beyond 22 nm and increase in complexity, defects become more detrimental to device performance and harder to

SRC, NIST Introduce Second Phase of Nanoelectronics Research Initiative with $5 Million in Annual Funding to Develop Post-CMOS Electronics

May 8, 2013

Additional Media Contact: SRC: Dan Francisco 916-293-9030 GAITHERSBURG, Md. – The Semiconductor Research Corporation (SRC) and the National Institute of

New NIST Reference Materials for MEMS devices

New NIST Measurement Tool Is On Target for the Fast-Growing MEMS Industry

April 30, 2013

As markets for miniature, hybrid machines known as MEMS grow and diversify, the National Institute of Standards and Technology (NIST) has introduced a long

Christina Hacker

PML Researchers Open Door to Advanced Molecular Electronic Metrology

April 12, 2013

Continued advancements using a NIST-developed molecular-level fabrication technique are leading to new discoveries in the metrology for molecular electronics by

Nanoscale Edge Variations Observed with Record-breaking Resolution in Magnetic Nanodevices

March 27, 2013

A team of researchers from the Royal Institute of Technology, Stockholm, the University of Maryland, and the NIST Center for Nanoscale Science and Technology

Nanoelectronics Conference Will Focus on Semiconductor Industry's Future

March 5, 2013

How the semiconductor industry can create the next generations of nanoscale computing technology will be one of the themes of the 2013 International Conference

NIST Captures Chemical Composition with Nanoscale Resolution

February 12, 2013

Researchers at the National Institute of Standards and Technology (NIST) and the University of Maryland have demonstrated that a new spectroscopy technique can

Richter and Jang

Electron Spin Transport Demonstrated for First Time in an Organic Device

December 14, 2012

Researchers in the Semiconductor and Dimensional Metrology Division's Nanoelectronic Device Metrology (NEDM) Project have demonstrated the first documented case

Key Property of Graphene Sustained Over Wide Ranges of Density and Energy

November 14, 2012

A collaboration led by researchers from the NIST Center for Nanoscale Science and Technology has shown for the first time that charge carriers in graphene

Bright field transmission electron micrograph showing carbon nanotubes grown from an array of equally-sized iron catalyst particles created by electron beam-induced decomposition of a diiron nonacarbonyl precursor.

Researchers Observe, Control, and Optimize the Growth of Individual Carbon Nanotubes

October 31, 2012

Researchers from the NIST Center for Nanoscale Science and Technology and Arizona State University have used an environmental scanning transmission electron

nri nanomagnet composite

NRI to Lead New Five-Year Effort to Develop Post-CMOS Electronics

October 16, 2012

The National Institute of Standards and Technology (NIST) announced today the selection of the Nanoelectronics Research Initiative (NRI), a collaboration of

Researchers Introduce New Method for Imaging Defects in Magnetic Nanodevices

September 12, 2012

A team of researchers from the NIST Center for Nanoscale Science and Technology, the Royal Institute of Technology, Stockholm, and the University of Maryland

NIST 'Hybrid Metrology' Method Could Improve Computer Chips

September 5, 2012

A refined method developed at the National Institute of Standards and Technology (NIST) for measuring nanometer-sized objects may help computer manufacturers

PML Uses Combined Optical Techniques to Provide Important Answers on Graphene Structures

August 13, 2012

That graphene is the hot new material in the world of future electronics manufacturing is well known. With its high carrier mobility and low noise, graphene is

Researchers Demonstrate and Explain Surface Conduction in a Topological Insulator

July 11, 2012

Researchers at the University of Maryland and the NIST Center for Nanoscale Science and Technology have for the first time experimentally demonstrated surface

Shaffique Adam Receives Singapore National Research Foundation Fellowship

June 27, 2012

Shaffique Adam, an NRC Postdoctoral Research Associate in the NIST Center for Nanoscale Science and Technology, has been awarded a 2012 Singapore National

NIST Goes the Distance for the Olympics

June 27, 2012

In yet another Olympian feat of measurement, researchers at the National Institute of Standards and Technology (NIST) recently calibrated a tape that will be

Spin Polarized Supercurrents Optimized with a Simple Flip

May 11, 2012

Researchers from Michigan State University, the NIST Center for Neutron Research, and the NIST Center for Nanoscale Science and Technology have discovered the

NIST researchers' new approach to trapping nanoparticles uses a control and feedback system that nudges them only when needed.

Light Touch Keeps a Grip on Delicate Nanoparticles

May 2, 2012

Using a refined technique for trapping and manipulating nanoparticles, researchers at the National Institute of Standards and Technology (NIST) have extended

Imaging Complex Domain Wall Structures in Magnetic Nanostripes

April 18, 2012

Researchers from the NIST Center for Nanoscale Science and Technology and Massachusetts Institute of Technology have used the scanning electron microscopy with

In-Situ Observations Reveal How Nanoparticle Catalysts Lower Operating Temperatures in Fuel Cells

April 10, 2012

Researchers from the NIST Center for Nanoscale Science and Technology and Arizona State University have used environmental transmission electron microscopy

Nanoscale Magnetic Media Diagnostics by Rippling Spin Waves

April 3, 2012

Memory devices based on magnetism are one of the core technologies of the computing industry, and engineers are working to develop new forms of magnetic memory

NIST Announces $2.6 Million in Funding for Novel Semiconductor Research

March 20, 2012

The National Institute of Standards and Technology (NIST) is soliciting proposals to support long-term research in next-generation semiconductor technology

layered switching devices

NIST Reveals Switching Mechanism in Promising Computer Memory Device

February 21, 2012

Sometimes knowing that a new technology works is not enough. You also must know why it works to get marketplace acceptance. New information from the National