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Search Patents by Huairuo Zhang

Patents listed here reflect only technologies patented from FY 2018-present. To view all of NIST's patented technologies, visit the NIST pages on the Federal Laboratory Consortium website.

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Phase Transition Based Resistive Random-Access Memory

NIST Inventors

Albert Davydov , Sergiy Krylyuk and Huairuo Zhang

A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device