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Displaying 76 - 100 of 1439

Gate resistance thermometry: An electrical thermal characterization technique

July 15, 2022
Author(s)
Georges Pavlidis, Brian Foley, Samuel Graham
Gate Resistance Thermometry (GRT) is a potential reliable technique to determine the average temperature of the gate metal in GaN transistors. In contrast to other electrical techniques that average the temperature across different areas of the active

Crystallize it before it diffuses: Thin -film growth of the phosphorus-rich semiconductor CuP2

July 13, 2022
Author(s)
Feng Yi, David A. LaVan, Andrea Crovetto, Danny Kojda, Karen Heinselman, Klaus Habicht, Thomas Unold, Andriy Zakutayev
Numerous phosphorus-rich metal phosphides containing both P-P bonds and metal-P bonds are known from the solid state chemistry literature. Yet, very little is known about the thin- film synthesizability and properties of even the simplest binary compounds

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

High-performance dual-gate graphene pH sensors

June 28, 2022
Author(s)
Son Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind Balijepalli
High precision biophysical measurements that are portable and performed without prior labeling of the molecules can greatly benefit several areas of biotechnology and biophysics, but existing techniques often lack sufficient resolution. Field-effect

Synthesis, crystal structure, and physical properties of BaSnS2

February 11, 2022
Author(s)
Wilarachchige Gunatilleke, Andrew May, Angela R. Hight Walker, Adam Biacchi, George Nolas
Phase-pure BaSnS2, with space group Pn21/c, was synthesized and the structural and physical properties were investigated. The thermal properties and optical measurements are reported for the first time. The Debye temperature and Sommerfeld coefficient were

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration
Displaying 76 - 100 of 1439