An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye
In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure
To design and construct hardware for general intelligence, we must consider principles of both neuroscience and very-large-scale integration. For large neural systems capable of general intelligence, the attributes of photonics for communication and
Son T. Le, Seulki Cho, Curt A. Richter, Arvind Balijepalli
Field-effect transistors (FETs) are a powerful tool for sensitive measurements of numerous biomarkers (e.g., proteins, nucleic acids, antigen, etc.) and gaseous species. However, most research in the field has focused on building discrete devices with high
Plasma simulations require accurate yield data to predict the electron flux that is emitted when plasma-exposed surfaces are bombarded by energetic particles. One can measure yields directly using particle beams, but it is impractical to create a separate
Yanxue Hong, Aruna Ramanayaka, Ryan Stein, Joshua M. Pomeroy
The design, fabrication and characterization of single metal gate layer, metal-oxide- semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a
Jirun Sun, Nancy Lin, Joy Dunkers, Sheng Lin-Gibson
One common tissue engineering approach for regenerating or replacing damaged tissues involves a porous polymeric scaffold. The scaffolds serve as the mechanical framework for cell attachment and growth, and generate an environment with features that span
Lee J. Richter, Tommaso Nicolini, Jokubas Surgailis, Achileas Savva, Guillaume Wantz, Olivier Dautel, Georges Hadiziioannou, Natalie Stingelin
Organic mixed conductors find use in batteries, bioelectronics technologies, neuromorphic computing and sensing. While great progress has been achieved, polymer-based mixed conductors frequently experience significant volumetric changes during ion uptake
Zhen Qi, Curtis R. Menyuk, Jason Gorman, Adarsh V. Ganesan
Recently, the mechanical analog of optical frequency combs, phononic frequency combs, have been demonstrated in mechanical resonators and have gained interest since their comb frequencies can be in the range of kilohertz to gigahertz. The physical origin
We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an arrival-time
Ahmad R. Kirmani, Huilang Chen, Christopher Stafford, Emily Bittle, Lee J. Richter
Scalable, solution-deposited metal oxide (MO) thin films could enable low-cost, flexible, large- area electronics; however, the poor morphology of the typically polycrystalline films limits performance. It is demonstrated that optimized coating thickness
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement
Maicol A. Ochoa, James E. Maslar, Herbert S. Bennett
Raman measurements can be utilized as a non-destructive method for determining carrier density in compound semiconductors. Rigorous determination of carrier density involves comparing measured and simulated coupled phonon-plasmon Raman spectra. Theories of