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NIST Authors in Bold

Displaying 201 - 225 of 1439

Low-resistance, high-yield electrical contacts to atom scale Si:P devices using palladium silicide

March 29, 2019
Author(s)
Scott W. Schmucker, Pradeep Namboodiri, Ranjit Kashid, Xiqiao Wang, Binhui Hu, Jonathan Wyrick, Alline Myers, Joshua D. Schumacher, Richard M. Silver, Michael Stewart
Scanning tunneling microscopy (STM) enables the fabrication of 2-D delta-doped structures in Si with atomistic precision, with applications from tunnel field effect transistors to qubits. The combination of a very small contact area and the restrictive

UV LEDs Based on p-i-n Core-Shell AlGaN/GaN Nanowire Heterostructures Grown by N-polar Selective Area Epitaxy

March 20, 2019
Author(s)
Matthew Brubaker, Kristen Genter, Alexana Roshko, Paul T. Blanchard, Bryan T. Spann, Todd E. Harvey, Kris A. Bertness
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm with 5x higher intensities than similar GaN homojunction LEDs. The improved characteristics were

Probe assisted localized doping of aluminum into silicon substrates

February 20, 2019
Author(s)
Jungjoon Ahn, Santiago D. Solares, Lin You, Hanaul Noh, Joseph Kopanski, Yaw S. Obeng
In this paper, we demonstrate AFM probe assisted deterministic doping (PADD) of Al into an n- type Si (100) wafer, to generate nanoscale counter-doped junctions with a few nanometers depth from Si surface. The local electrical potential changes resulting

X-ray Metrology for the Semiconductor Industry Tutorial

February 1, 2019
Author(s)
Daniel F. Sunday, Wen-Li Wu, Scott Barton, Regis J. Kline
The semiconductor industry is in need of new, in-line dimensional metrology methods with higher spatial resolution for characterizing their next generation nanodevices. The purpose of this short course is to train the semiconductor industry on the NIST

MoS2 cleaning by acetone and UV-Ozone: Geological vs. synthetic material (Letter)

January 25, 2019
Author(s)
Keren M. Freedy, Sales G. Maria, Sergiy Krylyuk, Albert Davydov, Stephen J. McDonnell
The effects of poly(methyl methacrylate) PMMA removal procedures on the surface chemistry of both geological and chemical vapor deposited (CVD) MoS2 are investigated. X-ray photoelectron spectroscopy is employed following acetone dissolution, thermal

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

January 14, 2019
Author(s)
Duane J. McCrory, Mark Anders, Jason Ryan, Pragya Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason Campbell
We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows

Microwave Monitoring of Atmospheric Corrosion of Interconnects

December 28, 2018
Author(s)
Papa Amoah, Dmitry Veksler, Christopher E. Sunday, Stephane Moreau, David Bouchu, Yaw S. Obeng
Traditional metrology has been unable to adequately address the reliability needs of emerging integrated circuits at the nano scale; thus, new metrology and techniques are needed. In this paper, we use microwave propagation characteristics (insertion

Black phosphorus tunneling field-effect transistors

December 21, 2018
Author(s)
Albert Davydov, Huairuo Zhang, Leonid A. Bendersky
Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome

Electric field induced phase transition in vertical MoTe2 and Mo1-xWxTe2 based RRAM devices

December 10, 2018
Author(s)
Feng Zhang, Sergiy Krylyuk, Huairuo Zhang, Cory A. Milligan, Dmitry Y. Zemlyanov, Leonid A. Bendersky, Albert Davydov, Joerg Appenzeller, Benjamin P. Burton, Yugi Zhu
Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H

Magnetotransport in highly enriched 28Si for quantum information processing devices

November 25, 2018
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph Hagmann, Hyun S. Kim, Curt A. Richter, Joshua M. Pomeroy
Elimination of unpaired nuclear spins can result in low error rates for quantum computation; therefore, isotopically enriched 28Si is regarded as an ideal environment for quantum information processing devices. Using mass selected ion beam deposition

Effects of Nitrogen on the Interface Density of States Distribution in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors: Super-hyperfine Interactions and Near Interface Silicon Vacancy Energy Levels

November 13, 2018
Author(s)
Mark Anders, Patrick M. Lenahan, Arthur H. Edwards, Peter A. Schultz, Renee M. Van Ginhoven
The performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities
Displaying 201 - 225 of 1439