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Search Publications by: James K. Olthoff (Assoc)

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Displaying 26 - 50 of 272

Electron Attachment Cross Sections and Negative Ion States of SF6

January 1, 2001
Author(s)
Loucas G. Christophorou, James K. Olthoff
A comprehensive and critical assessment of published data on the total, dissociative, and nondissociative electron attachment cross sections for SF 6 allowed us to recommend or suggest room temperature values for these cross sections over an energy range

Electron Interactions with c-C 4 F 8

January 1, 2001
Author(s)
Loucas G. Christophorou, James K. Olthoff
The limited electron collision cross-section and transport-coefficient data for the plasma processing gas perfluorocyclobutane (c-C 4F 8) are synthesized, assessed, and discussed. These include cross sections for total electron scattering, differential

Electron Collision Data for Plasma-Processing Gases

October 1, 2000
Author(s)
Loucas G. Christophorou, James K. Olthoff
Low-temperature plasma applications require detailed understanding of the physical and chemical processes occurring in the plasmas themselves. For instance, as the push for smaller feature sizes and higher quality devices in the semiconductor industry has

Electron Interactions with Excited Atoms and Molecules

October 1, 2000
Author(s)
Loucas G. Christophorou, James K. Olthoff
Elastic, inelastic, and superelastic scattering of electrons by and electron-impact ionization of excited atoms are reviewed and discussed and the role of the electric dipole polarizabilty in the interaction of slow electrons with excited atoms is

Electron Interactions with SF 6

September 1, 2000
Author(s)
Loucas G. Christophorou, James K. Olthoff
We have comprehensively reviewed and critically assessed the state of knowledge on electron-interaction cross sections and electron-swarm parameters in SF 6. In this paper are presented our: (1) assessed data for the total electron scattering, elastic

Inductively Coupled Plasmas in Low Global Warming Potential Gases

August 1, 2000
Author(s)
Amanda N. Goyettes, Yicheng Wang, James K. Olthoff
Many high density discharges used in microelectronics fabrication use fluorocarbon gases with coincidentally high global-warming potentials (GWPs). We have determined the identities, fluxes, and energy distributions of ions produced in high density