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Search Publications by: Wen-Li Wu (Assoc)

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Displaying 101 - 125 of 386

Line Edge Roughness Characterization of Sub-50nm Structures Using CD-SAXS: Round-Robin Benchmark Results

January 1, 2007
Author(s)
Chengqing C. Wang, J C. Roberts, Robert Bristol, B Bunday, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, John S. Villarrubia, Kwang-Woo Choi, James S. Clarke, Bryan J. Rice, Michael Leeson
he need to characterize line edge and line width roughness in patterns with sub-50 nm critical dimension challenges existing platforms based on electron microscopy and optical scatterometry. The development of x-ray based metrology platforms provides a

Evidence for Internal Stresses Induced by Nanoimprint Lithography

November 30, 2006
Author(s)
Hyun Wook Ro, Yifu Ding, Hae-Jeong Lee, Daniel R. Hines, Ronald L. Jones, Eric K. Lin, Alamgir Karim, Wen-Li Wu, Christopher L. Soles
The thermal embossing form of nanoimprint lithography is used to pattern arrays of nanostructures into several different polymer films. The shape of the imprinted patterns is characterized with nm precision using both X-ray scattering and reflectivity

The Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

October 28, 2006
Author(s)
Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen-Li Wu, M Muthukumar
The response of unentangled polymer thin films to aqueous hydroxide solutions is measured as a function of increasing weakly-acidic methacrylic acid comonomer content produced by an in-situ reaction-diffusion process. Quartz crystal microbalance with

Structural Characteristics of Methylsilsesquioxane Based Porous Low-k Thin Films Fabricated with Increasing Cross-Linked Particle Porogen Loading

September 1, 2006
Author(s)
Hae-Jeong Lee, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Eric K. Lin, Wen-Li Wu
Methylsilsesquioxane (MSQ) based porous low-k dielectric films with different porogen loading have been characterized using X-ray porosimetry (XRP) to determine their pore size distribution, average density, wall density and porosity. By varying the

Deprotection Kinetics in 193 nm Photoresist Thin Films: Influence of Copolymer Content

July 25, 2006
Author(s)
Shuhui Kang, Vivek M. Prabhu, B D. Vogt, Eric K. Lin, Wen-Li Wu, Karen Turnquest
The reaction-diffusion mechanism of photoacids is dependent upon many variables including the reaction rate, size of the acid counterion species and temperature. Recent experiments have demonstrated the acid diffusion can be controlled by a combination of

Fundamentals of the Reaction-Diffusion Process in Model EUV Photoresists

March 1, 2006
Author(s)
Kristopher Lavery, George Thompson, Hai Deng, D S. Fryer, Kwang-Woo Choi, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Sushil K. Satija, Michael Leeson, Heidi B. Cao
More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For EUV resists, control of line width roughness (LWR) and high resist sensitivity are key requirements

Dissolution Fundamentals of 193-nm Methacrylate Based Photoresists

February 19, 2006
Author(s)
Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Karen Turnquest, W D. Hinsberg
The dissolution of partially deprotected chemically amplified photoresists is the final step in printing lithographic features. Since this process step can be tuned independently from the design of the photoresist chemistry, fundamental measurements of the