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Search Publications by: Albert Davydov (Fed)

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Displaying 326 - 343 of 343

Refractive Index Study of Al x Ga 1-x N Films Grown on Sapphire Substrates

September 1, 2003
Author(s)
Norman Sanford, Larry Robins, Albert Davydov, Alexander J. Shapiro, Denis V. Tsvetkov, Vladimir A. Dmitriev, Stacia Keller, Umesh Mishra, Steven P. DenBaars
A prism coupling method was used to measure the ordinary (italic}n o) and extraordinary (italic}n e) refractive indices of Al xGa 1-xN films, grown by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD) on sapphire, at

Interfacial Reactions of Ti/n-GaN Contacts at Elevated Temperature

July 1, 2003
Author(s)
C J. Lu, Albert Davydov, Daniel Josell, Leonid A. Bendersky
Interfacial reactions in Ti/GaN contacts have been studied using conventional and high-resolution transmission electron microscopy (TEM), energy-filtered TEM (EFTEM) and X-ray diffraction. The thin film contacts were fabricated by evaporating Ti on n-GaN

Revised Thermodynamic Description for the Co-Mo System

June 1, 2003
Author(s)
Albert Davydov, Ursula R. Kattner
The previously assessed Co-Mo system (1999Dav) has been partially revised: thermodynamic descriptions for the liquid, , ς and bcc phases were amended in the attempt to eliminate some unrealistic phase diagram features, such as inverse liquid miscibility

Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGAN Films Using Prism-Coupling Techniques Correlated With Spectroscopic Reflection/Transmission Analysis

January 1, 2003
Author(s)
Norman Sanford, Larry Robins, Albert Davydov, Alexander J. Shapiro, Denis V. Tsvetkov, Vladimir A. Dmitriev, Stacia Keller, Umesh Mishra, Steven P. DenBaars
Waveguide prism-coupling methods were used to measure the ordinary and extraordinary refractive indices of Al xGaN films grown on sapphire substrates by HVPE and MOCVD. Several discrete wavelengths ranging from 442 nm to 1064 nm were used and the results

Characterization of 2.5 Inch Diameter Bulk GaN Grown from Melt-Solution

November 1, 2001
Author(s)
V Soukhoveev, V Ivantsov, Y Melnik, Albert Davydov, Denis Tsvetkov, K Tsvetkova, I Nikitina, A Zubrilov, A Lavrentiev, Vladimir A. Dmitriev
Crystal growth from a melt or melt-solution is a widely accepted technique for industrial-scale production of important semiconductor materials. Recently we have demonstrated 50 mm diameter GaN crystals grown by melt-solution technique [1]. The crystals

Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

November 1, 2001
Author(s)
Denis Tsvetkov, Y Melnik, Albert Davydov, Alexander J. Shapiro, O Kovalenkov, J B. Lam, J J. Song
Multi layer AlGaN/GaN epitaxial structures were grown on SiC by HVPE method. Characterization of the grown structures was performed using SEM, SIMS, mercury probe, electroluminescence and photoluminescence techniques. Thicknesses of nitride layers in the

Thermal Stability of MOCVD and HVPE GaN Layers in H 2 , HCl, NH 3 and N 2

November 1, 2001
Author(s)
M A. Mastro, O M. Kryliouk, M D. Reed, T J. Anderson, Albert Davydov, Alexander J. Shapiro
This work represents a complete study of GaN annealed in H 2, HCl, NH 3 and N 2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were observed to undergo dissociative sublimation mechanism with only gaseous

Thermodynamic Assessment of the Gallium - Nitrogen System

November 1, 2001
Author(s)
Albert Davydov, William J. Boettinger, Ursula R. Kattner, T J. Anderson
Thermochemical and phase diagram data for the Ga-N system were assessed by employing the CALPHAD method. A consistent model representation of available thermodynamic properties agrees well with the critically evaluated experimental data. Thermodynamic