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Search Publications by: Oleg Kirillov (Fed)

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Displaying 26 - 50 of 78

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

April 30, 2013
Author(s)
Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A. Kirillov, James E. Maslar, D. E. Ioannou, Qiliang Li
Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampered by

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry

January 9, 2013
Author(s)
Kun Xu, Oleg A. Kirillov, David J. Gundlach, Nhan V. Nguyen, Pei D. Ye, Min Xu, Lin Dong, Hong Sio
Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100

A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets

January 2, 2013
Author(s)
Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A. Kirillov, David J. Gundlach, Curt A. Richter, Nhan V. Nguyen
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band

Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy

March 6, 2012
Author(s)
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A. Kirillov, Curt A. Richter, Nhan Van Nguyen
The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from

Spin transport in memristive devices

January 26, 2012
Author(s)
Hyuk-Jae Jang, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior

Microwave Characterization of Transparent Conducting Films

May 26, 2011
Author(s)
Jan Obrzut, Oleg A. Kirillov
The high frequency conductivity of thin metallic and graphitic nano-films attracts interest due to many potential applications in spin electronics, electromagnetic shielding, flexible antennas, displays, and solar cells. The surface morphology of thin