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Simulations are increasingly employing explicit reservoirs internal, finite regions to drive electronic or particle transport. This naturally occurs in simulations of transport via ultracold atomic gases. Whether the simulation is numerical or physical
Michael Schneider, Christine A. Donnelly, Stephen E. Russek
Josephson junctions and single flux quantum (SFQ) circuits form a natural neuromorphic technology with SFQ pulses and superconducting transmission lines simulating action potentials and axons, respectively. Josephson junctions consist of superconducting
Transport calculations based on ab-initio band structures reveal large interface-generated spin currents at Co/Pt, Co/Cu, and Pt/Cu interfaces. These spin currents are driven by in-plane electric fields but flow out-of-plane, and can have similar strengths
The purpose of the NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA) is to facilitate quantitative interpretation of Auger-electron and X-ray photoelectron spectra (AES/XPS) for surface analysis and to improve the accuracy
Barry I. Schneider, Nicholas Douguet, Luca Argenti
The complex Kohn (CK) variational method is extended to compute light-driven electronic transitions between continuum wavefunctions in atomic and molecular systems. This development enables the study of multiphoton processes in the perturbative regime for
Yohan Yoon, Dongheon Ha, Ik Jae Park, Paul M. Haney, Sangwook Lee, Nikolai Zhitenev
In this work, we study spatially-resolved generation of photocurrent of methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells to reveal the microscopic effects of annealing temperature and degradation under light exposure. Correlating a novel
Atmospheric chemical doping can be used to modify the electronic properties of graphene. Although extensive experimental work on tuning atmospheric chemical doping of graphene has been reported, such a study of graphene on SiC is still lacking. Here we
gennadi bersuker, Dmitry Veksler, Donald Pierce, Maribeth Mason
Scaled advanced node devices incorporate new combinations of semiconductor materials and ultra-thin multi-layer dielectric stacks. As a consequence, inter-material interactions may unpredictably affect transistor electrical characteristics and reliability
Chieh W. Liu, Chiashain Chuang, Yanfei Yang, Randolph Elmquist, Yi-Ju Ho, Hsin Y. Lee, Chi-Te Liang
We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that
Benjamin McMorran, Amit Agrawal, Peter Ercius, Vincenzo Grillo, Andrew Herzing, Tyler R. Harvey, Martin Linck
The surprising message of the 1992 paper of Allen, Beijersbergen, Spreeuw, and Woerdman (ABSW) was that photons could exhibit orbital motion in free space, which subsequently launched advancements in optical manipulation, microscopy, quantum optics
Analytic expressions are presented for the dark current-voltage relation J(V ) of a pn+ junction with charged columnar grain boundaries with high defect density. These expression apply to non-depleted grains with sufficiently high bulk hole mobilities. The
Barry I. Schneider, Lee A. Collins, klaus Bartschat, Xiaoxu Guan, Suxing Hu
We discuss a number of aspects regarding the physics of H_2+ nd H_2. This includes low-energy electron scattering processes and the interaction of both weak (perturbative) and strong (ultrafast/intense) electromagnetic radiation with those systems.