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Randolph E. Elmquist, Mariano A. Real, Irene G. Calizo, Brian G. Bush, Tian T. Shen, Nikolai N. Klimov, David B. Newell, Angela R. Hight Walker, Randall M. Feenstra
This paper describes concepts and measurement techniques necessary for characterization of graphene in the development of graphene-based quantized Hall effect (QHE) devices and resistance standards. We briefly contrast the properties of graphene produced
Galen C. O'Neil, Peter J. Lowell, Joel N. Ullom, Jason M. Underwood
In a refrigerator, heat is moved from one system to another and this movement requires an additional dissipated power. It is desirable to both isolate the cooled system, so that its temperature may differ from the bath, and to heatsink the heated system so
In this chapter, we study the electronic structure of arbitrarily stacked multilayer graphene in the absence or presence of magnetic field. Energy band structure and Landau level spectrum are obtained using a pi-orbital continuum model with nearest
Youngman Jang, Samuel R. Bowden, Mark Mascaro, John Unguris, Caroline Ross
360˚, 540˚ and other complex transverse domain walls have been created in narrow Co wires connected to injection pads by cycling a magnetic field perpendicular to the wire length. The composite walls, formed by impingement of 180˚ transverse walls of
Randolph E. Elmquist, Felipe Hernandez-Marquez, Mariano Real, Tian T. Shen, David B. Newell, Colin J. Jacob, George R. Jones
The development of large-area graphene has direct application to electrical standards including the quantized Hall resistance because of unique characteristics not found in conventional devices. These include symmetrical conduction by electrons and holes
Shaffique Adam, Suyong S. Jung, Nikolai N. Klimov, Nikolai B. Zhitenev, Joseph A. Stroscio, Mark D. Stiles
Close to charge neutrality, graphene's energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles that determine the properties of graphene at low carrier density. However, the details of puddle formation have remained
We consider models of organic bulk heterojunction photovoltaics with spatially varying compo- sition of donor/acceptor materials. We find analytic expressions for the current-voltage relation in simplifed cases for two blend geometries, and find the effect
Randolph E. Elmquist, David B. Newell, George R. Jones, Felipe L. Marquez-Hernandez, Mariano A. Real, Tian T. Shen
Many material and electronic contributions must be favorable to produce devices with strong quantum Hall effect (QHE) plateaus that are suitable for precise resistance metrology. Even so, metrologically interesting QHE plateaus have been observed in
Shaffique Adam, Sankar Das Sarma, Euyheon Hwang, Enrico Rossi
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical
Hongki Min, Parakh Jain, Shaffique Adam, Mark D. Stiles
We calculate the conductivity of arbitrarily stacked multilayer graphene sheets within a relaxation time approximation by considering both short-range and long-range impurities. We investigate theoretically the feasibility of identifying the stacking order
Hongki Min, Shaffique Adam, Young J. Song, Joseph A. Stroscio, Mark D. Stiles, Allan H. MacDonald
The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be radically altered by the presence of a Scanning Tunneling Microscope (STM) tip used to probe top-layer electronic properties, and by a
This article presents a brief review of some of the many insights gained about metallic ferromagnetism using spin-polarized electrons as probes. Aspects of metallic ferromagnetism discussed include spin-dependent electronic structure, spin-dependent mean
This paper reports effects of inter-film interactions on static and dynamic magnetization behavior at film edges in magnetic trilayer stripe arrays under transverse applied fields. The trilayers consist of two magnetic films of Ni80Fe20, 10 nm and 20 nm