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John S. Villarrubia, Andras Vladar, Bin Ming, Regis J. Kline, Daniel F. Sunday, Jasmeet Chawla, Scott List
The width and shape of 10 nm to 12 nm wide lithographically patterned SiO2 lines were measured in the scanning electron microscope by fitting the measured intensity vs. position to a physics-based model in which the lines widths and shapes are parameters
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the simplest
John S. Villarrubia, Andras Vladar, Michael T. Postek
The ability to model the effect of fields due to charges trapped in insulators with floating conductors has been added to JMONSEL (Java Monte Carlo simulator for Secondary Electrons) and applied to a simple photomask metal on glass geometry. These
Leite Marina, maxim abashin, Henri Lezec, anthony gianfrancesco, Alec Talin, Nikolai Zhitenev
The local collection characteristics of grain interiors and grain boundaries in thin film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small
Yasufumi Araki, Guru S. Khalsa, Allan H. MacDonald
Disorder scattering and spin-orbit coupling are together responsible for the diffusion and relaxation of spin-density in time-reversal invariant systems. We study spin-relaxation and diffusion in a two-dimensional electron gas with Rashba spin-orbit
Uwe Arp, Alexander Sorokin, Ulf Jastrow, Pavle Jurani?, Svea Kreis, Mathias Richter, Yiping Feng, Dennis Nordlund, Kai Tiedtke, Philip Heimann, Bob Nagler, Hae Ja Lee, Stephanie Mack, Marco Cammarata, Oleg Krupin, Marc Messerschmidt, Michael Holmes , Michael Rowen, William Schlotter, Stefan Moeller, Joshua Turner
This paper reports novel measurements of x-ray optical radiation on an absolute scale from a recently developed source of radiation generated in the soft x-ray regime of a free electron laser. We give a brief description of the physics behind the
We study the effect of electron and phonon interface scattering on the thermoelectric properties of disordered, polycrystalline materials (with grain sizes larger than electron and phonons' mean free path). Interface scattering of electrons is treated with
It is shown that the current-induced torques between a ferromagnetic layer and an antiferromagnetic layer with a compensated interface vanish when the ferromagnet is aligned with an axis of spin-rotation symmetry of the antiferromagnet. For properly chosen
Kyung-Jin Lee, H.-W. Lee, Aurelien Manchon, Mark D. Stiles, Paul M. Haney
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular
Randolph E. Elmquist, Fan-Hung Liu, Chang-Shun Hsu, Chiashain Chuang, Tak-Pong Woo, Lung-I Huang Huang, Chi-Te Laing, Yasuhiro Fukuyama, Yanfei Yang
We have performed magnetotransport measurements on multi-layer epitaxial graphene. By increasing the driving current I through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in
Vanita Srinivasa, Katja C. Nowack, Mohammad Shafiei, Lieven M. Vandersypen, Jacob M. Taylor
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyper- fine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double
William H. Butler, William Rippard, Stephen E. Russek, Ranko R. Heindl
We model "soft" error rates for writing (WSER) and for reading (RSER) for spin-torque memory devices that have a free layer with easy axis perpendicular to the film plane by solving the Fokker-Planck equation for the probability distribution of the angle
We study the surface states of Bi2Se3 close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density result in electron and hole puddles that dominate the electronic properties of these materials. By