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Search Publications by: Albert Davydov (Fed)

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Displaying 251 - 275 of 343

Electrolyte stability determines scaling limits for solid-state 3D Li-ion batteries

December 20, 2011
Author(s)
Dmitry A. Ruzmetov, Vladimir P. Oleshko, Paul M. Haney, Henri J. Lezec, K Karki, K Baloch, Amit K. Agrawal, Albert Davydov, Sergiy Krylyuk, Y Liu, JY Huang, Mihaela M. Tanase, John Cumings, Albert A. Talin
Rechargeable, all-solid state Li-ion batteries (LIBs) with high specific capacity and small footprint are highly desirable to power an emerging class of miniature, autonomous microsystems that operate without a hardwire for power or communications. A

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires

October 25, 2011
Author(s)
Aric Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman Sanford, Albert Davydov, Abhishek Motayed, Denis Tsvetkov
We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant

Abstract of the presentation: Position- and polarization- resolved microphotoluminescence of GaN/AlGaN core-shell nanowires

October 17, 2011
Author(s)
Albert Davydov, G. Jacopin, S. Bellei, Denis Tsvetkov, Kristine A. Bertness, L. Rigutti, Norman A. Sanford, John B. Schlager, M. Tchernycheva, F. H. Julien
Over the past decade, core-shell nanowires (NWs) have been intensively used as the building blocks of novel optoelectronic devices as solar cells [1], LEds [2], naolasers [3]. Indeed, this geometry not only allows to passivate surface states, but also

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions

GaN Nanowires Grown by Molecular Beam Epitaxy

August 1, 2011
Author(s)
Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and high

Highly Selective GaN-nanowire/TiO2-nanocluser Hybrid Sensors for Detection of Benzene and Related Environment Pollutants

July 22, 2011
Author(s)
Geetha G. Aluri, Abhishek Motayed, Albert Davydov, Vladimir Oleshko, Kristine A. Bertness, Norman Sanford
Nanowire-nanocluster hybrid chemical sensors were realized by functionalizing gallium nitride (GaN) nanowires with titanium dioxide (TiO2) nanoclusters for selectively sensing benzene and other related aromatic compounds. Hybrid sensor devices were

GaN nanowires grown by molecular beam epitaxy

July 1, 2011
Author(s)
Kristine A. Bertness, Norman A. Sanford, Albert Davydov
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include defect-free growth mode with no residual strain, long photoluminescence lifetime, low surface recombination velocity and high mechanical quality

Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure

December 15, 2010
Author(s)
Sergiy Krylyuk, Albert Davydov, Igor Levin
Device applications of tapered Si nanowire (SiNW) arrays require reliable technological approaches for fabricating nanowires with controlled shape and orientation. In this study, we systematically explore effects of growth conditions on tapering of Si

Compressive stress effect on the radial elastic modulus of oxidized Si nanowires

March 23, 2010
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook
Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their