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Search Publications by: Albert Davydov (Fed)

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Displaying 276 - 300 of 343

Diameter Dependent Transport Properties of GaN Nanowire Field Effect Transistors

October 16, 2008
Author(s)
Abhishek Motayed, Mark D. Vaudin, Albert Davydov, John Meingailis, Maoqi He, S N. Mohammad
We report transport properties measurements of individual GaN nanowire field effect transistors and the correlation of the electron mobilities with the existence of grain boundaries in these nanowires. These nanowires are grown by direct reaction of NH3

Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN

October 16, 2008
Author(s)
Nadin Mahadik, M V. Rao, Albert Davydov
he performance of novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically stable low resistance ohmic contacts. Isochronal (2 min) anneals in the 600 degrees C to 740 degrees C temperature range and

Thermodynamic Assessment of the Co-Mo System

October 16, 2008
Author(s)
Albert Davydov, Ursula R. Kattner
The experimental thermochemical and phase diagram data for the Co-Mo system were assessed. A consistent thermodynamic description, using a Redlich-Kister model for the solution phases and sublattice and line compound models for the intermetallics, was

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the

The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films

May 9, 2008
Author(s)
D. H. Hill, Robert A. Bartynski, Nhan Van Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M. Frank
We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS results are

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

A Brighter Future From Gallium Nitride Nanowires

October 1, 2006
Author(s)
Kristine A. Bertness, Norman Sanford, Albert Davydov
How might nitride semiconductor nanowires change the future of computing? In the spirit of this special issue on how science fiction might become working technology, we offer some speculations and explain the science behind them. This article focuses on

Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns

January 5, 2006
Author(s)
J E. Van Nostrand, J. E. Averett, R Cortez, J. Boeckl, C Stutz, Norman Sanford, Albert Davydov, M M. Maska
Vertically oriented gallium nitride GaN nanocolumns (NCs) approximately 90±10 nm wide and 0.75 microns tall were grown by plasma-assisted molecular beam epitaxy on Al_(2)O_(3)(0001) and Si(111). The dense packing of the NCs gives them the appearance of a

Catalyst-Free Growth of GaN Nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Norman Sanford, Joy Barker, John B. Schlager, Alexana Roshko, Albert Davydov, Igor Levin
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were used. The nanowires displayed a number of interesting materials properties, including room-temperature luminescence intensity

High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires

January 1, 2006
Author(s)
Kristine A. Bertness, Alexana Roshko, Albert Davydov, Igor Levin, Mark D. Vaudin, Joy Barker, John B. Schlager, Norman Sanford, Larry Robins
We have grown a variety of isolated GaN nanowires using gas-source molecular beam epitaxy (MBE) and characterized their structural and optical properties. The nanowires have demonstrated a number of promising materials characteristics, including low defect