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Search Publications by: Kin (Charles) Cheung (Fed)

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Displaying 201 - 225 of 251

Frequency-Dependent Charge-Pumping: The Depth Question Revisited

May 1, 2010
Author(s)
Fan Zhang, Kin P. Cheung, Jason Campbell, John S. Suehle
A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between

On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing

April 26, 2010
Author(s)
Kin P. Cheung
The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates

A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

October 21, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required

An Improved Fast I d -V ^d g Measurement Technology With Expanded Application Range

October 19, 2009
Author(s)
Chen Wang, Liangchun (. Yu, Jason P. Campbell, Kin P. Cheung, Yi Xuan, Peide Ye, John S. Suehle, David Zhang
Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper

Wafer-level Hall Measurement on SiC MOSFET

October 16, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate

Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs

May 18, 2009
Author(s)
Jason P. Campbell, Liangchun (. Yu, Kin P. Cheung, Jin Qin, John S. Suehle, A Oates, Kuang Sheng
We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel