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Search Publications by: Yaw S. Obeng (Fed)

Displaying 76 - 100 of 172

The Influence of Pulsed Electroplating Frequency and Duty Cycle on Copper Film Microstructure and Stress State

January 1, 2017

Author(s)

James Marro, Taghi Darroudi, Kathleen C. Richardson, Yaw S. Obeng, Chukwudi A. Okoro

In this work we studied the impact of pulse electroplating parameters on the cross-sectional and surface microstructures of blanket copper films using electron backscattering diffraction and x-ray diffraction. The films evaluated were highly (111) textured

Towards Understanding Early Failures Behavior during Device Burn-In: Broadband RF Monitoring of Atomistic Changes in Materials

August 18, 2016

Author(s)

Yaw S. Obeng, Chukwudi A. Okoro, Papa K. Amoah, Victor H. Vartanian

In this paper, we attempt to understand the physico-chemical changes that occur in devices during device burn-in. We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects present in the

Characterization of Buried Interfaces with Scanning Probe Microscopes

May 19, 2016

Author(s)

Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng

Scanning probe microscopes (SPMs) have some capability to image sub-surface structure, including the details of buried interfaces. This paper describes the theoretical and practical basis for obtaining information about shallow buried interfaces

Low Frequency Radio Wave Detection of Electrically Active Defects in Dielectrics

May 19, 2016

Author(s)

Yaw S. Obeng, Chukwudi A. Okoro, Pavel Kabos, Rhonda R. Franklin, Papa K. Amoah

In this paper, we discuss the use of low frequency (up to 300 MHz) radio waves (RF) to detect and characterize electrical defects present in the dielectrics of emerging integrated circuit devices. As an illustration, the technique is used to monitor the

Hardware Security to Mitigate Threats to Networked More-Than-Moore Sensors

May 18, 2016

Author(s)

Yaw S. Obeng

Networked sensors (a. k. a., Internet of Things (IoT)) represents a new era in the evolution of telecommunications made possible by the reduced cost of performance in electronic devices. This is the era where even the most mundane items are connected to

Hardware Security Thorough Supply Chain Assurance

April 28, 2016

Author(s)

Yaw S. Obeng, David A. Brown, Colm Nolan

This paper examines the current issues pertaining to the hardware security and how they could affect the overall security of applications such as the internet of things. Specifically, we review the ongoing industry-led activities aimed at mitigating the

Subsurface Imaging of Ungrounded Metal Lines Embedded in Dielectric with the Scanning Microwave Microscope

December 17, 2015

Author(s)

Lin You, Jungjoon Ahn, Yaw S. Obeng, Joseph Kopanski

We demonstrate the ability of the scanning microwave microscope (SMM) to measure the subsurface location of ungrounded. 1.2-μm wide metal lines embedded in a dielectric film. The SMM was used to image Al-Si-Cu metal lines in a test chip that were

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits

October 11, 2015

Author(s)

Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski

The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based

iNEMI Project on Automotive Electronic Material Challenges

September 3, 2015

Author(s)

Yaw S. Obeng

Automobiles are incorporating more and more electronics from various industry sectors that have not been optimally designed for use inside the vehicle passenger compartment. Reliability and cost are two key considerations when incorporating traditional

Experimental Measurement of the Effect of Copper Through-Silicon Via Diameter on Stress Buildup Using Synchrotron-based X-ray Source

June 20, 2015

Author(s)

Chukwudi A. Okoro, Lyle E. Levine, Yaw S. Obeng, Ruqing Xu

In this work, the effect of Cu through-silicon via (TSV) diameter on stress buildup in Cu TSVs was experimentally determined using synchrotron-based X-ray microdiffraction technique. With the aid of atomic force microscopy (AFM), Cu protrusion was also

Nanoelectronic Structural Information with Scanning Probe Microscopes

June 14, 2015

Author(s)

Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng

Scanning probe microscope (SPM) based methods to obtain subsurface structural information about nano-structured materials are described. A test structure chip containing structures to produce various surface electric field gradients, spatially varying

Experimentally, How Does Cu TSV Diameter Influence its Stress State?

May 27, 2015

Author(s)

Chukwudi A. Okoro, Lyle E. Levine, Yaw S. Obeng, Ruqing Xu

In this work, an experimental study of the influence of Cu through-silicon via (TSV) diameter on stress build up was performed using synchrotron-based X-ray microdiffraction technique. Three Cu TSV diameters were studied; 3 µm, 5 µm and 8 µm, all of which

EVALUATION OF PRODUCT AUTHENTICATION TECHNOLOGIES: A DETAILED EVALUATION OF THE CURRENT AND EMERGING TECHNOLOGIES

May 25, 2015

Author(s)

Yaw S. Obeng

Product authentication is a critical capability for all supply chains in todays globalized world. Manufacturers, distributors, retailers and customers of all products, from consumer goods to mission critical systems have a growing need to authenticate